The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Apr. 23, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/08 (2006.01); C23C 16/50 (2006.01); C23C 16/56 (2006.01); C30B 25/10 (2006.01); C30B 25/14 (2006.01); C30B 25/18 (2006.01); C30B 29/52 (2006.01); H01J 37/05 (2006.01); H01J 37/32 (2006.01); H01L 21/28 (2006.01); H01L 21/3065 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/822 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/0227 (2013.01); C23C 16/08 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01); C30B 25/105 (2013.01); C30B 25/14 (2013.01); C30B 25/186 (2013.01); C30B 29/52 (2013.01); H01J 37/05 (2013.01); H01J 37/3244 (2013.01); H01L 21/02532 (2013.01); H01L 21/02661 (2013.01); H01L 21/28088 (2013.01); H01L 21/3065 (2013.01); H10D 30/024 (2025.01); H10D 30/43 (2025.01); H10D 30/6211 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 30/701 (2025.01); H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10D 62/118 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 62/822 (2025.01); H10D 64/017 (2025.01); H10D 84/017 (2025.01); H10D 84/0177 (2025.01); H10D 84/0184 (2025.01); H10D 84/0186 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H01J 2237/3321 (2013.01);
Abstract
A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region.