The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Dec. 14, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Min Liu, Hsinchu, TW;
Li-Li Su, Chubei, TW;
Chii-Horng Li, Zhubei, TW;
Yee-Chia Yeo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A device includes a first nanostructure over a semiconductor substrate; a second nanostructure over the first nanostructure; a gate structure surrounding the first nanostructure and the second nanostructure; a first epitaxial region in the semiconductor substrate adjacent the gate structure, wherein the first epitaxial region is a first doped semiconductor material; and a second epitaxial region over the first epitaxial region, wherein the second epitaxial region is adjacent the first nanostructure and the second nanostructure, wherein the second epitaxial region is a second doped semiconductor material that is different from the first doped semiconductor material. In an embodiment, the first doped semiconductor material has a smaller doping concentration than the second doped semiconductor material.