The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Sep. 26, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, and a first epitaxial source/drain region in the first fin and adjacent the first gate spacer. The first epitaxial source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer including silicon and carbon, a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a different material composition than the first epitaxial layer, the first epitaxial layer separating the second epitaxial layer from the first fin, and a third epitaxial layer on the second epitaxial layer, the third epitaxial layer having a different material composition than the first epitaxial layer.