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For the Inventor, By the Inventor

Hsinchu, Taiwan

Heng-Wen Ting

This inventor holds 32 USPTO granted patents and 10 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Tsing Hua University. Active years: 2012-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heng-Wen Ting. Retrieved from https://idiyas.com/inventor/heng-wen-ting

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 93.8

Average Co-Inventor Count = 6.2

ph-index = 4

Forward Citations = 61(Granted Patents)


Location History:

  • Hsin-Chu, TW (2017 - 2023)
  • Pingtung County, TW (2012 - 2024)
  • Pingtung, TW (2021 - 2024)

Company Filing History:

goldMedal30 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 1,308 
 
National Tsing Hua University
 patents

Years Active: 2012-2025

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Areas of Expertise:
FinFET
Source/Drain Structure
Epitaxy Regions
Organic Thin Film Transistor
Interfacial Layer
Perylene Diimide
Semiconductor Fabrication
Device Manufacturing
32 patents (USPTO):Explore Patents
1. 12471311 - Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer (2025-11-11),
2. 12336210 - Source/drain structure for semiconductor device (2025-06-17),
3. 12218240 - Source/drain regions of FinFET devices and methods of forming same (2025-02-04),
4. 12112986 - FinFET device and method (2024-10-08),
5. 12094761 - FETs and methods of forming FETs (2024-09-17),
6. 12057450 - Epitaxy regions with large landing areas for contact plugs (2024-08-06),
7. 12002854 - Semiconductor device and method of manufacture (2024-06-04),
8. 11948999 - Semiconductor device (2024-04-02),
9. 11735668 - Interfacial layer between fin and source/drain region (2023-08-22),
10. 11735664 - Source/drain regions of FINFET devices and methods of forming same (2023-08-22),
11. 11728208 - FETS and methods of forming FETS (2023-08-15),
12. 11652105 - Epitaxy regions with large landing areas for contact plugs (2023-05-16),
13. 11575026 - Source/drain structure for semiconductor device (2023-02-07),
14. 11482620 - Interfacial layer between Fin and source/drain region (2022-10-25),
15. 11430878 - Method for fabricating semiconductor device (2022-08-30),

Title: The Innovative Journey of Heng-Wen Ting

Introduction:

Heng-Wen Ting, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents:

Ting's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various electronic devices.

Career Highlights:

Throughout his illustrious career, Ting has been instrumental in revolutionizing the semiconductor industry with his groundbreaking inventions. His work has not only pushed the boundaries of technology but has also paved the way for future innovations in the field.

Collaborations:

Ting has collaborated with leading tech companies and research institutions worldwide to further his research and bring his inventions to life. His partnerships have been crucial in driving forward the development of new technologies and applications.

Conclusion:

In conclusion, Heng-Wen Ting's relentless pursuit of innovation and his dedication to pushing the limits of technology have solidified his position as a trailblazing inventor in the semiconductor industry. His work continues to inspire future generations of inventors and shape the technological landscape for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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