The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Jul. 28, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Yun Chin, Taichung, TW;
Chii-Horng Li, Zhubei, TW;
Chien-Wei Lee, Kaohsiung, TW;
Hsueh-Chang Sung, Zhubei, TW;
Heng-Wen Ting, Pingtung County, TW;
Roger Tai, Taipei, TW;
Pei-Ren Jeng, Chu-Bei, TW;
Tzu-Hsiang Hsu, Xinfeng Township, TW;
Yen-Ru Lee, Hsinchu, TW;
Yan-Ting Lin, Baoshan Township, TW;
Davie Liu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An embodiment is a semiconductor structure. The semiconductor structure includes a substrate. A fin is on the substrate. The fin includes silicon germanium. An interfacial layer is over the fin. The interfacial layer has a thickness in a range from greater than 0 nm to about 4 nm. A source/drain region is over the interfacial layer. The source/drain region includes silicon germanium.