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Yen-Ru Lee

This inventor holds 56 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2014-2026.

USPTO Granted Patents = 56 (Patent Applications = 9)

% Patents Active = 96.4

Average Co-Inventor Count = 5.9

ph-index = 6

Forward Citations = 97(Granted Patents)

Forward Citations (Not Self Cited) = 81(Dec 10, 2025)

Company Filing History:

54 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

2 out of 463

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2014-2026

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Areas of Expertise:

FinFET

Source/Drain Structure

Epitaxial Growth

Interfacial Layer

Nano-Sheet Architecture

V-Shape Recess Profile

Thermal Management

Device Performance

Doped Capping Layer

Fabrication Methods

Supportive Layer

Semiconductor Manufacturing

56 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12696503 - Supportive layer in source/drains of FinFET devices (2026-07-28),

2. 12666709 - Semiconductor device and method (2026-06-23),

3. 12471311 - Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer (2025-11-11),

4. 12419076 - Semiconductor device and method (2025-09-16),

5. 12336210 - Source/drain structure for semiconductor device (2025-06-17),

6. 12218240 - Source/drain regions of FinFET devices and methods of forming same (2025-02-04),

7. 12191393 - Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction (2025-01-07),

8. 12112986 - FinFET device and method (2024-10-08),

9. 12094761 - FETs and methods of forming FETs (2024-09-17),

10. 12034061 - Method for forming semiconductor structure (2024-07-09),

11. 12002854 - Semiconductor device and method of manufacture (2024-06-04),

12. 11948999 - Semiconductor device (2024-04-02),

13. 11929401 - Method of forming a source/drain (2024-03-12),

14. 11855142 - Supportive layer in source/drains of FinFET devices (2023-12-26),

15. 11735668 - Interfacial layer between fin and source/drain region (2023-08-22),

Certainly! Here is the article about inventor Yen-Ru Lee:

Title: Unveiling the Innovations of Inventor Yen-Ru Lee

Introduction:

In the bustling city of Hsinchu, Taiwan, resides the prolific inventor Yen-Ru Lee, known for his groundbreaking contributions in the field of semiconductor devices. With a remarkable portfolio of 45 patents, Yen-Ru Lee continues to push the boundaries of technological advancements.

Latest Patents:

One of Yen-Ru Lee's latest patents showcases a cutting-edge semiconductor device that revolutionizes the industry. This device features a unique design with multiple semiconductor fins, a source/drain epitaxial structure, a semiconductive cap, and a contact, ensuring enhanced performance and efficiency. Additionally, his method of forming a source/drain involves innovative treatments with high heat and hydrogen plasma, optimizing the functionality of the semiconductor components.

Career Highlights:

Yen-Ru Lee is a key figure at Taiwan Semiconductor Manufacturing Company Limited (TSMC), a leading semiconductor company globally. His expertise and relentless pursuit of innovation have propelled TSMC to the forefront of the semiconductor industry, solidifying its reputation for excellence and innovation.

Collaborations:

In his professional journey, Yen-Ru Lee has collaborated with esteemed colleagues such as Chii-Horng Li and Heng-Wen Ting. Together, they have synergized their expertise to develop groundbreaking technologies and drive positive change in the semiconductor landscape.

Conclusion:

Inventor Yen-Ru Lee's dedication to innovation and his significant contributions to the semiconductor industry have left an indelible mark on the field. His relentless pursuit of excellence and penchant for pushing technological boundaries continue to inspire future generations of inventors and innovators.

I hope you find this article informative and engaging. If you have any more requests or need further information, feel free to ask!

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