The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Jul. 22, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Kun-Mu Li, Zhudong Township, TW;
Heng-Wen Ting, Pingtung, TW;
Hsueh-Chang Sung, Zhubei, TW;
Yen-Ru Lee, Hsinchu, TW;
Chien-Wei Lee, Kaohsiung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/3065 (2013.01); H01L 21/3083 (2013.01); H01L 21/823418 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/785 (2013.01);
Abstract
A device includes a fin over a substrate, the fin including a first end and a second end, wherein the first end of the fin has a convex profile, an isolation region adjacent the fin, a gate structure along sidewalls of the fin and over the top surface of the fin, a gate spacer laterally adjacent the gate structure, and an epitaxial region adjacent the first end of the fin.