For the Inventor, By the Inventor

Enter inventor name

Zhudong, Taiwan

Kun-Mu Li

USPTO Granted Patents = 69 (Patent Applications = 9)

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 156(Granted Patents)

Forward Citations (Not Self Cited) = 129(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsinchu, TW (2017 - 2020)
Zhudong Township, Hsinchu County, TW (2019 - 2020)
Zhudong Township, TW (2014 - 2024)
Hsinchu County, TW (2016 - 2024)

Company Filing History:

69 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Years Active: 2014-2025

Loading Chart...

Areas of Expertise:

Semiconductor Devices

FinFET Technology

Epitaxial Structures

Source/Drain Regions

Integrated Circuits

Static Random Access Memory

Doping Profiles

Transistor Structures

MOS Devices

Epitaxial Channel Layers

Strained Source/Drain Regions

Contact Structures

69 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12426358 - Semiconductor device having epitaxy source/drain regions (2025-09-23),

2. 12349392 - Semiconductor device and manufacturing method thereof (2025-07-01),

3. 12218240 - Source/drain regions of FinFET devices and methods of forming same (2025-02-04),

4. 12112986 - FinFET device and method (2024-10-08),

5. 12075607 - Semiconductor device (2024-08-27),

6. 12062720 - Epitaxial source/drain structure and method of forming same (2024-08-13),

7. 12009427 - Semiconductor device and manufacturing method thereof (2024-06-11),

8. 11916071 - Semiconductor device having epitaxy source/drain regions (2024-02-27),

9. 11888046 - Epitaxial fin structures of finFET having an epitaxial buffer region and an epitaxial capping region (2024-01-30),

10. 11749752 - Doping profile for strained source/drain region (2023-09-05),

11. 11735664 - Source/drain regions of FINFET devices and methods of forming same (2023-08-22),

12. 11610994 - Epitaxial source/drain structure and method of forming same (2023-03-21),

13. 11574916 - Semiconductor device and manufacturing method thereof (2023-02-07),

14. 11532749 - Semiconductor structure with blocking layer (2022-12-20),

15. 11489074 - Semiconductor device and manufacturing method thereof (2022-11-01),

Title: Inventor Kun-Mu Li: Revolutionizing Technology in Zhudong

Introduction: Kun-Mu Li is a pioneering inventor hailing from Zhudong, Taiwan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Kun-Mu Li holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of innovative ideas.

Career Highlights: With a career spanning over two decades, Kun-Mu Li has worked tirelessly to bring his inventions to life, with many of them making a significant impact on various industries.

Collaborations: Throughout his career, Kun-Mu Li has collaborated with leading research institutions, universities, and tech companies to further develop and commercialize his inventions, solidifying his reputation as a visionary inventor.

Conclusion: Kun-Mu Li's relentless pursuit of innovation and his passion for pushing the boundaries of technology have cemented his legacy as a prominent inventor not only in Zhudong but on a global scale.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…