Kun-Mu Li

This inventor holds 72 USPTO granted patents and 6 published patent applications, primarily in FinFET Technology (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2014-2026.

USPTO Granted Patents = 72 (Patent Applications = 6)

% Patents Active = 91.7

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 168(Granted Patents)

Forward Citations (Not Self Cited) = 129(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsinchu, TW (2017 - 2020)
Zhudong Township, Hsinchu County, TW (2019 - 2020)
Zhudong Township, TW (2014 - 2024)
Hsinchu County, TW (2016 - 2024)

Company Filing History:

71 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 463

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2014-2026

Loading Chart...

Areas of Expertise:

FinFET

Epitaxy

Source/Drain Regions

Semiconductor Device

Integrated Circuit

Doping Profile

MOS Devices

Epitaxial Structures

Manufacturing Method

Stressors

Device Performance

Contact Structure

72 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12701751 - Doping profile for strained source/drain region (2026-08-04),

2. 12677437 - Semiconductor structure with blocking layer (2026-07-07),

3. 12538529 - Epitaxial fin structures of FINFET having an epitaxial buffer region and an epitaxial capping region (2026-01-27),

4. 12426358 - Semiconductor device having epitaxy source/drain regions (2025-09-23),

5. 12349392 - Semiconductor device and manufacturing method thereof (2025-07-01),

6. 12218240 - Source/drain regions of FinFET devices and methods of forming same (2025-02-04),

7. 12112986 - FinFET device and method (2024-10-08),

8. 12075607 - Semiconductor device (2024-08-27),

9. 12062720 - Epitaxial source/drain structure and method of forming same (2024-08-13),

10. 12009427 - Semiconductor device and manufacturing method thereof (2024-06-11),

11. 11916071 - Semiconductor device having epitaxy source/drain regions (2024-02-27),

12. 11888046 - Epitaxial fin structures of finFET having an epitaxial buffer region and an epitaxial capping region (2024-01-30),

13. 11749752 - Doping profile for strained source/drain region (2023-09-05),

14. 11735664 - Source/drain regions of FINFET devices and methods of forming same (2023-08-22),

15. 11610994 - Epitaxial source/drain structure and method of forming same (2023-03-21),

Title: Inventor Kun-Mu Li: Revolutionizing Technology in Zhudong

Introduction: Kun-Mu Li is a pioneering inventor hailing from Zhudong, Taiwan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Kun-Mu Li holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of innovative ideas.

Career Highlights: With a career spanning over two decades, Kun-Mu Li has worked tirelessly to bring his inventions to life, with many of them making a significant impact on various industries.

Collaborations: Throughout his career, Kun-Mu Li has collaborated with leading research institutions, universities, and tech companies to further develop and commercialize his inventions, solidifying his reputation as a visionary inventor.

Conclusion: Kun-Mu Li's relentless pursuit of innovation and his passion for pushing the boundaries of technology have cemented his legacy as a prominent inventor not only in Zhudong but on a global scale.