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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12538529 B1

PDFFull Text
Date of Patent:
Jan. 27, 2026

Filed:

Nov. 16, 2023

Epitaxial fin structures of finfet having an epitaxial buffer region and an epitaxial capping region

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsueh-Chang Sung, Zhubei, TW;

Kun-Mu Li, Zhudong Township, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Sterne, Kessler, Goldstein & Fox P.L.L.C.

Primary Examiner:

Khiem D Nguyen

Int. Cl.
CPC ...
H10D 62/00 (2025.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/13 (2025.01); H10D 62/40 (2025.01); H10D 64/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 62/021 (2025.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02609 (2013.01); H01L 21/0262 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/6211 (2025.01); H10D 30/797 (2025.01); H10D 62/151 (2025.01); H10D 62/405 (2025.01); H10D 64/017 (2025.01); H10D 62/116 (2025.01);
Abstract

A fin structure on a substrate is disclosed. The fin structure can comprises a first epitaxial region and a second epitaxial region separated by a dielectric region, a merged epitaxial region on the first epitaxial region and the second epitaxial region, an epitaxial buffer region on a top surface of the merged epitaxial region, and an epitaxial capping region on the buffer epitaxial region and side surfaces of the merged epitaxial region.

Find Patent Forward Citations

Sung, Hsueh-Chang. (2026). Epitaxial fin structures of finfet having an epitaxial buffer region and an epitaxial capping region (U.S. Patent No. 12538529). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12538529

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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