The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Dec. 03, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Hsueh-Chang Sung, Zhubei, TW;
Tsz-Mei Kwok, Hsinchu, TW;
Kun-Mu Li, Zhudong Township, TW;
Tze-Liang Lee, Hsinchu, TW;
Chii-Horng Li, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a method of forming a transistor device. The method may be performed by forming a gate structure onto a semiconductor substrate and forming a source/drain recess within the semiconductor substrate adjacent to a side of the gate structure. One or more strain inducing materials are formed within the source/drain recess. The one or more strain inducing materials include a strain inducing component with a strain inducing component concentration profile that continuously decreases from a bottommost surface of the one or more strain inducing materials to a position above the bottommost surface. The bottommost surface contacts the semiconductor substrate.