The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Dec. 14, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kun-Mu Li, Zhudong Township, Hsinchu County, TW;
Wei-Yang Lee, Taipei City, TW;
Wen-Chu Hsiao, Tainan City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure, and a source/drain structure in the fin structure and adjacent to the gate structure. The source/drain structure includes: a first epitaxial layer over the fin structure, a second epitaxial layer over the first epitaxial layer, and an epitaxial capping layer over the second epitaxial layer. The semiconductor structure also includes a silicide layer formed in contact with the source/drain structure. The silicide layer has a curved bottom surface, and the curved bottom surface of the silicide layer intersects with the second epitaxial layer and the epitaxial capping layer.