Wen-Chu Hsiao

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Chu Hsiao. Retrieved from https://idiyas.com/inventor/wen-chu-hsiao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17

% Patents Active = 88.2

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 46(Granted Patents)

Company Filing History:

17 out of 42,926

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2015-2026

Loading Chart...

Areas of Expertise:

FinFET

Semiconductor Structure

Germanium Concentration

Blocking Layer

Contact Structure

Epitaxy

Thin Film Deposition

Dual Damascene

Device Fabrication

Surface Tension Modification

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12677437 - Semiconductor structure with blocking layer (2026-07-07),

2. 12349392 - Semiconductor device and manufacturing method thereof (2025-07-01),

3. 12278146 - Fin field-effect transistor device and method of forming the same (2025-04-14),

4. 12237404 - Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a Fin and resulting semiconductor devices (2025-02-25),

5. 11721745 - Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a fin and resulting semiconductor devices (2023-08-08),

6. 11532749 - Semiconductor structure with blocking layer (2022-12-20),

7. 11527442 - Fin field-effect transistor device and method of forming the same (2022-12-13),

8. 11309418 - Contact structure for FinFET semiconductor device (2022-04-19),

9. 11088028 - Fin field-effect transistor device and method of forming the same (2021-08-10),

10. 11011623 - Method for increasing germanium concentration of FIN and resulting semiconductor device (2021-05-18),

11. 10868181 - Semiconductor structure with blocking layer and method for forming the same (2020-12-15),

12. 10727131 - Source and drain epitaxy re-shaping (2020-07-28),

13. 10297690 - Method of forming a contact structure for a FinFET semiconductor device (2019-05-21),

14. 10269648 - Method of fabricating a semiconductor device structure (2019-04-23),

15. 9698263 - Surface tension modification using silane with hydrophobic functional group for thin film deposition (2017-07-04),

Title: Inventor Wen-Chu Hsiao: Revolutionizing Technology in Tainan

Introduction: Wen-Chu Hsiao is a pioneering inventor hailing from Tainan, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Hsiao's recent patents focus on innovative solutions in renewable energy, sustainable materials, and advanced electronics, showcasing her commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Hsiao has established herself as a leading figure in the tech industry, with numerous awards recognizing her ingenuity and impact.

Collaborations: Throughout her career, Hsiao has collaborated with top research institutions, universities, and tech companies worldwide, fostering a culture of innovation and knowledge-sharing.

Conclusion: Wen-Chu Hsiao's dedication to pushing the boundaries of technology and her relentless pursuit of innovation continue to inspire the next generation of inventors and shape the future of technology in Tainan and beyond.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]