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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9698263 B1

PDFFull Text
Date of Patent:
Jul. 04, 2017

Filed:

Nov. 19, 2015

Surface tension modification using silane with hydrophobic functional group for thin film deposition

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Lai-Wan Chong, Kaohsiung, TW;

Wen-Chu Hsiao, Tainan, TW;

Ying-Min Chou, Tainan, TW;

Hsiang-Hsiang Ko, Sinying, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Duane Morris LLP

Primary Examiner:

Ajay K Arora

Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823878 (2013.01); H01L 29/04 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor structure that includes crystalline surfaces and amorphous hydrophilic surfaces is provided. The hydrophilic surfaces are treated with silane that includes a hydrophobic functional group, converting the hydrophilic surfaces to hydrophobic surfaces. Chemical vapor deposition or other suitable deposition methods are used to simultaneously deposit a material on both surfaces and due to the surface treatment, the deposited material exhibits superior adherence qualities on both surfaces. In one embodiment, the structure is an opening formed in a semiconductor substrate and bounded by at least one portion of a crystalline silicon surface and at least one portion of an amorphous silicon oxide structure.

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