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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12237404 B1

PDFFull Text
Date of Patent:
Feb. 25, 2025

Filed:

Jun. 16, 2023

Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a fin and resulting semiconductor devices

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Che-Yu Lin, Hsinchu, TW;

Chien-Hung Chen, Hsinchu, TW;

Wen-Chu Hsiao, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

J E Schoenholtz

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/30 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/3003 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 29/7851 (2013.01); H01L 21/26513 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01);
Abstract

In an embodiment, a device includes a substrate, a first semiconductor layer that extends from the substrate, and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes silicon and the second semiconductor layer includes silicon germanium, with edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, and the second germanium concentration being less than the first germanium concentration. The device also includes a gate stack on the second semiconductor layer, lightly doped source/drain regions in the second semiconductor layer, and source and drain regions extending into the lightly doped source/drain regions.

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