Taiwan Semiconductor Manufacturing Comp. Ltd.

Yen-Ru Lee

Chii-Horng Li

Heng-Wen Ting

Hsueh-Chang Sung

Chien-Wei Lee

Jung-Chi Tai

Lilly Su

Chien-I Kuo

Chih-Yun Chin

Tze-Liang Lee

Pei-Ren Jeng

Pang-Yen Tsai

Yan-Ting Lin

Ming-Hua Yu

Tzu-Hsiang Hsu

Roger Tai

Li-Li Su

Tzu-Ching Lin

Kun-Mu Li

Chien-Chang Su

Yee-Chia Yeo

Che-Hui Lee

Ying-Wei Li

Yih-Ann Lin

Chih-Shan Chen

Davie Liu

Yang-Tai Hsiao

Yu-Hung Cheng

Yi-Hung Lin

Feng-Cheng Yang

Kei-Wei Chen

Chun-An Lin

Chih-Hung Nien

Jyun-Chih Lin

Jing-Yi Yan

Harry-Hak-Lay Chuang

Bao-Ru Young

Ming Zhu

Sin-Hua Wu

Chung-Hau Fei

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.

Source/drain structure for semiconductor device

A method includes forming a semiconductor fin over a substrate, etching the semiconductor fin to form a recess, wherein the recess extends into the substrate, and forming a source/drain region in the recess, wherein forming the source/drain region includes epitaxially growing a first semiconductor material on sidewalls of the recess, wherein the first semiconductor material includes silicon germanium, wherein the first semiconductor material has a first germanium concentration from 10 to 40 atomic percent, epitaxially growing a second semiconductor material over the first semiconductor material, the second semiconductor material including silicon germanium, wherein the second semiconductor material has a second germanium concentration that is greater than the first germanium concentration, and epitaxially growing a third semiconductor material over the second semiconductor material, the third semiconductor material including silicon germanium, wherein the third semiconductor material has a third germanium concentration that is smaller than the second germanium concentration.

Source/drain regions of FinFET devices and methods of forming same

A nano-FET and a method of forming is provided. In some embodiments, a nano-FET includes an epitaxial source/drain region contacting ends of a first nanostructure and a second nanostructure. The epitaxial source/drain region may include a first semiconductor material layer of a first semiconductor material, such that the first semiconductor material layer includes a first segment contacting the first nanostructure and a second segment contacting the second nanostructure, wherein the first segment is separated from the second segment. A second semiconductor material layer is formed over the first segment and the second segment. The second semiconductor material layer may include a second semiconductor material having a higher concentration of dopants of a first conductivity type than the first semiconductor material layer. The second semiconductor material layer may have a lower concentration percentage of silicon than the first semiconductor material layer.

Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction

A device includes a fin over a substrate, the fin including a first end and a second end, wherein the first end of the fin has a convex profile, an isolation region adjacent the fin, a gate structure along sidewalls of the fin and over the top surface of the fin, a gate spacer laterally adjacent the gate structure, and an epitaxial region adjacent the first end of the fin.

FinFET device and method

An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

FETs and methods of forming FETs

A method for forming a semiconductor structure includes forming a gate structure over a substrate. The method also includes forming a spacer on a sidewall of the gate structure. The method also includes forming a source/drain recess beside the spacer. The method also includes treating the source/drain recess and partially removing the spacers in a first cleaning process. The method also includes treating the source/drain recess with a plasma process after performing the first cleaning process. The method also includes treating the source/drain recess in a second cleaning process after treating the source/drain recess with the plasma process. The method also includes forming a source/drain structure in the source/drain recess after performing the second cleaning process.

Method for forming semiconductor structure

A semiconductor device having an improved source/drain region profile and a method for forming the same are disclosed. In an embodiment, a method includes etching one or more semiconductor fins to form one or more recesses; and forming a source/drain region in the one ore more recesses, the forming the source/drain region including epitaxially growing a first semiconductor material in the one or more recesses at a temperature of 600° C. to 800° C., the first semiconductor material including doped silicon germanium; and conformally depositing a second semiconductor material over the first semiconductor material at a temperature of 300° C. to 600° C., the second semiconductor material including doped silicon germanium and having a different composition than the first semiconductor material.

Semiconductor device and method of manufacture

A device includes a first semiconductor fin, a second semiconductor fin, a source/drain epitaxial structure, a semiconductive cap, and a contact. The first semiconductor fin and the second semiconductor fin are over a substrate. The source/drain epitaxial structure is connected to the first semiconductor fin and the second semiconductor fin. The source/drain epitaxial structure includes a first protruding portion and a second protruding portion aligned with the first semiconductor fin and the second semiconductor fin, respectively. The semiconductive cap is on and in contact with the first protruding portion and the second protruding portion. A top surface of the semiconductive cap is lower than a top surface of the first protruding portion of the source/drain epitaxial structure. The contact is electrically connected to the source/drain epitaxial structure and covers the semiconductive cap.

Semiconductor device

Embodiments provide a way of treating source/drain recesses with a high heat treatment and an optional hydrogen plasma treatment. The high heat treatment smooths the surfaces inside the recesses and remove oxides and etching byproducts. The hydrogen plasma treatment enlarges the recesses vertically and horizontally and inhibits further oxidation of the surfaces in the recesses.

Method of forming a source/drain

An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.

Supportive layer in source/drains of FinFET devices

An embodiment is a semiconductor structure. The semiconductor structure includes a substrate. A fin is on the substrate. The fin includes silicon germanium. An interfacial layer is over the fin. The interfacial layer has a thickness in a range from greater than 0 nm to about 4 nm. A source/drain region is over the interfacial layer. The source/drain region includes silicon germanium.

Interfacial layer between fin and source/drain region

Source/drain regions of FINFET devices and methods of forming same

FETS and methods of forming FETS

A semiconductor device including a source/drain region having a V-shaped bottom surface and extending below gate spacers adjacent a gate stack and a method of forming the same are disclosed. In an embodiment, a method includes forming a gate stack over a fin; forming a gate spacer on a sidewall of the gate stack; etching the fin with a first anisotropic etch process to form a first recess adjacent the gate spacer; etching the fin with a second etch process using etchants different from the first etch process to remove an etching residue from the first recess; etching surfaces of the first recess with a third anisotropic etch process using etchants different from the first etch process to form a second recess extending below the gate spacer and having a V-shaped bottom surface; and epitaxially forming a source/drain region in the second recess.

Semiconductor device and method

Growing community of inventors

Hsinchu, Taiwan

Yen-Ru Lee