The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Jan. 03, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chien-Wei Lee, Kaohsiung, TW;

Hsueh-Chang Sung, Zhubei, TW;

Yen-Ru Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/165 (2006.01); C30B 25/10 (2006.01); C30B 25/12 (2006.01); C30B 25/16 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/165 (2013.01); C30B 25/10 (2013.01); C30B 25/12 (2013.01); C30B 25/165 (2013.01); H01L 21/02315 (2013.01); H01L 21/02658 (2013.01); H01L 21/02661 (2013.01); H01L 21/3247 (2013.01); H01L 29/41791 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01);
Abstract

Embodiments provide a way of treating source/drain recesses with a high heat treatment and an optional hydrogen plasma treatment. The high heat treatment smooths the surfaces inside the recesses and remove oxides and etching byproducts. The hydrogen plasma treatment enlarges the recesses vertically and horizontally and inhibits further oxidation of the surfaces in the recesses.


Find Patent Forward Citations

Loading…