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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12336210 B1

PDFFull Text
Date of Patent:
Jun. 17, 2025

Filed:

Feb. 06, 2023

Source/drain structure for semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chien-Wei Lee, Kaohsiung, TW;

Chii-Horng Li, Zhubei, TW;

Heng-Wen Ting, Hsinchu, TW;

Yee-Chia Yeo, Hsinchu, TW;

Yen-Ru Lee, Hsinchu, TW;

Chih-Yun Chin, Taichung, TW;

Chih-Hung Nien, Changhua, TW;

Jing-Yi Yan, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Sterne, Kessler, Goldstein & Fox P.L.L.C.

Primary Examiner:

Amar Movva

Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01); H10D 62/834 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H01L 21/2257 (2013.01); H10D 30/62 (2025.01); H10D 62/151 (2025.01); H10D 62/834 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H10D 30/6219 (2025.01);
Abstract

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.

Find Patent Forward Citations

Lee, Chien-Wei. (2025). Source/drain structure for semiconductor device (U.S. Patent No. 12336210). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12336210

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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