The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Feb. 06, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chien-Wei Lee, Kaohsiung, TW;
Chii-Horng Li, Zhubei, TW;
Heng-Wen Ting, Hsinchu, TW;
Yee-Chia Yeo, Hsinchu, TW;
Yen-Ru Lee, Hsinchu, TW;
Chih-Yun Chin, Taichung, TW;
Chih-Hung Nien, Changhua, TW;
Jing-Yi Yan, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01); H10D 62/834 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H01L 21/2257 (2013.01); H10D 30/62 (2025.01); H10D 62/151 (2025.01); H10D 62/834 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H10D 30/6219 (2025.01);
Abstract
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.