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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12191393 B1

PDFFull Text
Date of Patent:
Jan. 07, 2025

Filed:

Apr. 23, 2021

Low ge isolated epitaxial layer growth over nano-sheet architecture design for rp reduction

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yan-Ting Lin, Baoshan Township, TW;

Yen-Ru Lee, Hsinchu, TW;

Chien-Chang Su, Kaohsiung, TW;

Chih-Yun Chin, Taichung, TW;

Chien-Wei Lee, Kaohsiung, TW;

Pang-Yen Tsai, Jhubei, TW;

Chii-Horng Li, Zhubei, TW;

Yee-Chia Yeo, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP;

Primary Examiner:

Eric K Ashbahian

Assistant Examiner:

Halee undefined Cramer

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 21/02532 (2013.01); H01L 21/0259 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66553 (2013.01); H01L 29/66636 (2013.01); H01L 29/66742 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01);
Abstract

A nano-FET and a method of forming is provided. In some embodiments, a nano-FET includes an epitaxial source/drain region contacting ends of a first nanostructure and a second nanostructure. The epitaxial source/drain region may include a first semiconductor material layer of a first semiconductor material, such that the first semiconductor material layer includes a first segment contacting the first nanostructure and a second segment contacting the second nanostructure, wherein the first segment is separated from the second segment. A second semiconductor material layer is formed over the first segment and the second segment. The second semiconductor material layer may include a second semiconductor material having a higher concentration of dopants of a first conductivity type than the first semiconductor material layer. The second semiconductor material layer may have a lower concentration percentage of silicon than the first semiconductor material layer.

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