Tzu-Hsiang Hsu

This inventor holds 26 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Epitaxy. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tzu-Hsiang Hsu. Retrieved from https://idiyas.com/inventor/tzu-hsiang-hsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 (Patent Applications = 4)

% Patents Active = 92.3

Average Co-Inventor Count = 5.4

ph-index = 4

Forward Citations = 35(Granted Patents)

Location History:

Hsinchu, TW (2017 - 2018)
Hsinchu County, TW (2017 - 2023)
Xinfeng Township, TW (2017 - 2024)

Company Filing History:

26 out of 42,810

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2017-2025

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Areas of Expertise:

Semiconductor Device

Epitaxial Growth

FinFET

Source Drain Epitaxy

Interfacial Layer

Semiconductor Structure

Device Fabrication

Tunable Epitaxy

Source Drain Features

Manufacturing Method

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12419076 - Semiconductor device and method (2025-09-16),

2. 11996467 - Method for epitaxial growth and device (2024-05-28),

3. 11735668 - Interfacial layer between fin and source/drain region (2023-08-22),

4. 11710792 - Semiconductor structure with improved source drain epitaxy (2023-07-25),

5. 11688794 - Method for epitaxial growth and device (2023-06-27),

6. 11677027 - Semiconductor device and method (2023-06-13),

7. 11581226 - Semiconductor device with tunable epitaxy structures and method of forming the same (2023-02-14),

8. 11495606 - FinFET having non-merging epitaxially grown source/drains (2022-11-08),

9. 11482620 - Interfacial layer between Fin and source/drain region (2022-10-25),

10. 11289574 - Methods of forming epitaxial source/drain features in semiconductor devices (2022-03-29),

11. 11264237 - Method of epitaxy and semiconductor device (2022-03-01),

12. 11257928 - Method for epitaxial growth and device (2022-02-22),

13. 11063152 - Semiconductor device and method (2021-07-13),

14. 11031498 - Semiconductor structure with improved source drain epitaxy (2021-06-08),

15. 10944005 - Interfacial layer between fin and source/drain region (2021-03-09),

Title: The Innovative Journey of Tzu-Hsiang Hsu

Introduction:

Tzu-Hsiang Hsu, a visionary inventor hailing from Xinfeng, China, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents:

Tzu-Hsiang Hsu's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach.

Career Highlights:

Throughout his illustrious career, Tzu-Hsiang Hsu has been recognized for his innovative solutions to complex problems. His inventions have revolutionized industries and improved the lives of many around the world.

Collaborations:

Tzu-Hsiang Hsu has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to the market. His collaborative spirit has led to the successful implementation of his ideas on a global scale.

Conclusion:

In conclusion, Tzu-Hsiang Hsu's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazing inventor in the world of technology. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

4 patents pending: