The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Dec. 21, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Yun Chin, Taichung, TW;
Yen-Ru Lee, Hsinchu, TW;
Chien-Chang Su, Kaohsiung, TW;
Yan-Ting Lin, Baoshan Township, TW;
Chien-Wei Lee, Kaohsiung, TW;
Bang-Ting Yan, Hsinchu, TW;
Heng-Wen Ting, Pingtung, TW;
Chii-Horng Li, Zhubei, TW;
Yee-Chia Yeo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming first devices in a first region of a substrate, wherein each first device has a first number of fins; forming second devices in a second region of the substrate that is different from the first region, wherein each second device has a second number of fins that is different from the first number of fins; forming first recesses in the fins of the first devices, wherein the first recesses have a first depth; after forming the first recesses, forming second recesses in the fins of the second devices, wherein the second recesses have a second depth different from the first depth; growing a first epitaxial source/drain region in the first recesses; and growing a second epitaxial source/drain region in the second recess.