Bang-Ting Yan

Title: Bang-Ting Yan: Innovator in Semiconductor Technology

Introduction

Bang-Ting Yan is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to device manufacturing.

Latest Patents

His latest patents include advancements in semiconductor devices with a source/drain barrier layer and methods of manufacture. The first patent describes a method for fabricating semiconductor devices, which involves patterning fins in a multilayer stack and forming an opening in a fin. This opening is crucial for creating a multilayer source/drain region, where a source/drain barrier material is deposited using a bottom-up deposition process. The multilayer source/drain region is then electrically coupled to a stack of nanostructures formed by removing sacrificial layers of the multilayer stack.

The second patent focuses on a nanosheet semiconductor device and the method for manufacturing it. This method includes forming a poly gate on a nanosheet stack, which consists of alternating first and second nanosheets. The process involves recessing the nanosheet stack to create a source/drain recess, forming an inner spacer, and selectively etching the second nanosheet.

Career Highlights

Bang-Ting Yan is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has significantly impacted the development of advanced semiconductor devices.

Collaborations

He has collaborated with notable colleagues, including Chii-Horng Li and Chien-Wei Lee, contributing to various projects that enhance semiconductor technology.

Conclusion

Bang-Ting Yan's innovative work in semiconductor technology and his contributions through patents highlight his role as a key figure in the industry. His advancements continue to shape the future of semiconductor devices.