The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Feb. 24, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chien-Chang Su, Hsinchu, TW;
Yan-Ting Lin, Hsinchu, TW;
Chien-Wei Lee, Hsinchu, TW;
Bang-Ting Yan, Hsinchu, TW;
Chih Teng Hsu, Hsinchu, TW;
Chih-Chiang Chang, Hsinchu, TW;
Chien-I Kuo, Hsinchu, TW;
Chii-Horng Li, Hsinchu, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.