Taiwan Semiconductor Manufacturing Comp. Ltd.

Bang-Ting Yan

Chii-Horng Li

Yee-Chia Yeo

Wei-Yang Lee

Chih-Chiang Chang

Chia-Pin Lin

Chien-Chang Su

Chien-I Kuo

Bo-Yu Lai

Chien-Wei Lee

Chien-wei Lee

Yan-Ting Lin

Chih Teng Hsu

Semiconductor devices and methods of fabricating the semiconductor devices are described herein. The method includes steps for patterning fins in a multilayer stack and forming an opening in a fin as an initial step in forming a multilayer source/drain region. The opening is formed into a parasitic channel region of the fin. Once the opening has been formed, a source/drain barrier material is deposited using a bottom-up deposition process at the bottom of the opening to a level below the multilayer stack. A multilayer source/drain region is formed over the source/drain barrier material. A stack of nanostructures is formed by removing sacrificial layers of the multilayer stack, the multilayer source/drain region being electrically coupled to the stack of nanostructures.

Semiconductor devices with a source/drain barrier layer and methods of manufacture

A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Nanosheet semiconductor device and method for manufacturing the same

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Hsinchu, Taiwan

Bang-Ting Yan