The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Apr. 26, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Min Liu, Hsinchu, TW;
Tsz-Mei Kwok, Hsinchu, TW;
Yung-Chun Yang, Taipei, TW;
Cheng-Yen Wen, Taichung, TW;
Li-Li Su, Hsinchu, TW;
Chii-Horng Li, Hsinchu, TW;
Yee-Chia Yeo, Hsinchu, TW;
Hui-Lin Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Provided is an epitaxial structure and a method for forming such a structure. The method includes forming a fin structure on a substrate, wherein the fin structure includes a semiconductor material having substantially a {110} crystallographic orientation. The method includes etching a portion of the fin structure to expose a sidewall portion of the semiconductor material. Further, the method includes growing an epitaxial structure on the sidewall of the semiconductor material, wherein the epitaxial structure propagates with facets having a {110} crystallographic orientation.