Hui-Lin Huang

Title: Hui-Lin Huang: Innovator in Semiconductor Technology

Introduction

Hui-Lin Huang is a prominent inventor based in Hsinchu, Taiwan. He is known for his contributions to semiconductor technology, particularly in the area of epitaxial growth processes. His innovative work has led to advancements in the manufacturing of semiconductor devices.

Latest Patents

Huang holds a patent titled "Epitaxial source/drain recess formation with metal-comprising masking layers and structures resulting therefrom." This patent describes a method that includes etching recesses adjacent to dummy gate stacks and fins, followed by the epitaxial growth of regions within these recesses. The process involves the use of a metal-comprising mask to facilitate the growth of epitaxy regions, showcasing Huang's expertise in semiconductor fabrication techniques. He has 1 patent to his name.

Career Highlights

Hui-Lin Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at TSMC has positioned him at the forefront of technological advancements in chip manufacturing. Huang's innovative methods contribute significantly to the efficiency and performance of semiconductor devices.

Collaborations

Huang collaborates with notable colleagues, including Li-Li Su and Yee-Chia Yeo. These partnerships enhance the research and development efforts within the semiconductor field, fostering an environment of innovation and creativity.

Conclusion

Hui-Lin Huang's contributions to semiconductor technology through his patent and work at TSMC highlight his role as a key innovator in the industry. His advancements continue to shape the future of semiconductor manufacturing.