The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jun. 06, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chien-Wei Lee, Kaohsiung, TW;
Che-Yu Lin, Hsinchu, TW;
Hsueh-Chang Sung, Zhubei, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a fin over a substrate, forming an isolation region adjacent the fin, forming a dummy gate structure over the fin, and recessing the fin adjacent the dummy gate structure to form a first recess using a first etching process. The method also includes performing a plasma clean process on the first recess, the plasma clean process including placing the substrate on a holder disposed in a process chamber, heating the holder to a process temperature between 300° C. and 1000° C., introducing hydrogen gas into a plasma generation chamber connected to the process chamber, igniting a plasma within the plasma generation chamber to form hydrogen radicals, and exposing surfaces of the recess to the hydrogen radicals. The method also includes epitaxially growing a source/drain region in the first recess.