The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Aug. 01, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Pin-Chu Liang, Hsinchu, TW;

Hsueh-Chang Sung, Hsinchu County, TW;

Chii-Horng Li, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10P 50/28 (2026.01);
Abstract

A method for manufacturing a semiconductor device is provided. The method includes forming an epitaxial stack over a substrate, the epitaxial stack comprising alternating sacrificial layers and channel layers; patterning the epitaxial stack into a first fin and a second fin; forming a dielectric wall between the first and second fins; forming a dielectric structure surrounding the first and second fins; depositing a protection layer over the first and second fins; after depositing the protection layer, etching back the dielectric structure to exposes sidewalls of the sacrificial layers; and replacing the sacrificial layers with a gate structure.


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Liang, Pin-Chu. (2026). Semiconductor device and manufacturing method thereof (U.S. Patent No. 12777669). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777669

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