Hsinchu, Taiwan

Jin-Aun Ng

This inventor holds 38 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Structures. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2011-2025.

USPTO Granted Patents = 38 

% Patents Active = 92.1

Average Co-Inventor Count = 5.2

ph-index = 6

Forward Citations = 160(Granted Patents)


Company Filing History:


Years Active: 2011-2025

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Areas of Expertise:
Semiconductor Device
High-K Metal Gate
Hybrid Fins
Silicon Germanium
Integrated Circuit
Nanowire Formation
Field Effect Transistor
Spacer Structure
Gate Electrode
Sealing Structure
Critical Dimension
Replacement Gate
38 patents (USPTO):Explore Patents

Title: Innovations by Jin-Aun Ng in Semiconductor Technology

Introduction: Jin-Aun Ng is a prominent inventor based in Hsinchu, Taiwan, with an impressive portfolio of 37 patents. His contributions primarily focus on advancements in semiconductor technology, which play a crucial role in modern electronic devices.

Latest Patents: Among his latest patents, Jin-Aun Ng has developed a semiconductor structure featuring a first gate-all-around FET over a substrate that includes first nanostructures and a first gate stack surrounding these nanostructures. This innovative structure also incorporates a first FinFET, adjacent to the gate-all-around FET, which consists of a fin structure and a second gate stack. Furthermore, Ng’s work includes a patent on silicon and silicon germanium nanowire formation, detailing techniques for creating PMOS and NMOS transistors that utilize germanium and silicon nanostructure channels.

Career Highlights: Jin-Aun Ng is affiliated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has significantly influenced the development of cutting-edge technologies used in various electronic applications. With 37 patents to his name, his contributions have reinforced the company’s position as an innovator in semiconductor manufacturing.

Collaborations: Throughout his career, Ng has collaborated with esteemed colleagues, including Bao-Ru Young and Harry-Hak-Lay Chuang. These partnerships have fostered an environment of innovation and excellence within the field of semiconductor research and development, leading to groundbreaking advancements.

Conclusion: Jin-Aun Ng's dedication to innovation and his substantial contributions to semiconductor technology exemplify the spirit of progress in the electronics industry. His work not only enhances the technological landscape but also serves as an inspiration for future inventors and researchers in the field.

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