The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jul. 05, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jin-Aun Ng, Hsinchu, TW;

Kuo-Cheng Chiang, Zhubei, TW;

Hung-Li Chiang, Taipei, TW;

Tzu-Chiang Chen, Hsinchu, TW;

I-Sheng Chen, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/834 (2025.01); H10D 84/0128 (2025.01); H10D 84/0158 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and multiple nanostructures over the substrate. The semiconductor device structure also includes a semiconductor fin between the substrate and the nanostructures. The semiconductor device structure further includes a gate stack wrapped around the nanostructures. The gate stack includes a gate dielectric layer, and the gate dielectric layer continuously extends along a bottommost nanostructure of the nanostructures and an upper portion of the semiconductor fin.


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