The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Dec. 27, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jin-Aun Ng, Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu, TW;
Hung-Li Chiang, Hsinchu, TW;
Tzu-Chiang Chen, Hsinchu, TW;
I-Sheng Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A structure and a formation method of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and an isolation structure over the semiconductor substrate. The semiconductor device structure also includes a first fin structure over the semiconductor substrate and surrounded by the isolation structure and a stack of nanostructures over the first fin structure. The nanostructures are separated from each other. The semiconductor device structure further includes a second fin structure over the semiconductor substrate. The second fin structure has an embedded portion surrounded by the isolation structure and a protruding portion over the isolation structure. The embedded portion is separated from the protruding portion by a distance.