The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Sep. 27, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jin-Aun Ng, Hsinchu, TW;
Bao-Ru Young, Zhubei, TW;
Harry-Hak-Lay Chuang, Singapore, SG;
Maxi Chang, Banciao, TW;
Chih-Tang Peng, Zhubei, TW;
Chih-Yang Yeh, Jhubei, TW;
Ta-Wei Lin, Minxiong Township, TW;
Huan-Just Lin, Hsinchu, TW;
Hui-Wen Lin, Taiping, TW;
Jen-Sheng Yang, Keelung, TW;
Pei-Ren Jeng, Chu-Bei, TW;
Jung-Hui Kao, Hsin-Chu, TW;
Shih-Hao Lo, Zhubei, TW;
Yuan-Tien Tu, Puzih, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, and a metal gate structure over the semiconductor substrate and the gate dielectric. The metal gate structure includes a first metal material. The integrated circuit further includes a seal formed on sidewalls of the metal gate structure. The integrated circuit further includes a dielectric film on the metal gate structure, the dielectric film including a first metal oxynitride comprising the first metal material and directly on the metal gate structure without extending over the seal formed on sidewalls of the metal gate structure.