Banciao, Taiwan

Maxi Chang


Average Co-Inventor Count = 10.9

ph-index = 3

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2011-2021

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7 patents (USPTO):

Title: Innovations of Inventor Maxi Chang

Introduction

Maxi Chang is a prominent inventor based in Banciao, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on advancements in gate dielectric structures and metal gate devices, which are crucial for modern integrated circuits.

Latest Patents

Among his latest patents is a method for forming a self-aligned insulated film for high-K metal gate devices. This innovative method involves creating a gate dielectric over a substrate and forming a metal gate structure that includes a first metal material. The process also includes forming a seal on the sidewalls of the metal gate structure and applying a dielectric film that comprises a first metal oxynitride directly on the metal gate structure without extending over the seal. This patent enhances the performance and reliability of integrated circuits.

Career Highlights

Maxi Chang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise in semiconductor fabrication processes has positioned him as a key player in the development of advanced technologies.

Collaborations

Maxi has collaborated with notable colleagues such as Jin-Aun Ng and Bao-Ru Young. Their combined efforts have contributed to the successful development of innovative semiconductor solutions.

Conclusion

Maxi Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His work continues to influence advancements in integrated circuit design and manufacturing.

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