The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Aug. 28, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jin-Aun Ng, Hsinchu, TW;
Maxi Chang, Banciao, TW;
Jen-Sheng Yang, Keelung, TW;
Ta-Wei Lin, Minxiong Township, TW;
Shih-Hao Lo, Zhubei, TW;
Chih-Yang Yeh, Jhubei, TW;
Hui-Wen Lin, Taiping, TW;
Jung-Hui Kao, Hsin-Chu, TW;
Yuan-Tien Tu, Puzih, TW;
Huan-Just Lin, Hsinchu, TW;
Chih-Tang Peng, Zhubei, TW;
Pei-Ren Jeng, Chu-Bei, TW;
Bao-Ru Young, Zhubei, TW;
Harry-Hak-Lay Chuang, Singapore, SG;
Taiwan semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, a metal gate structure over the semiconductor substrate and the gate dielectric, a dielectric film on the metal gate structure, the dielectric film comprising oxynitride combined with metal from the metal gate, and an interlayer dielectric (ILD) on either side of the metal gate structure.