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For the Inventor, By the Inventor

Hsinchu, Taiwan

Huan-Just Lin

USPTO Granted Patents = 122 

Average Co-Inventor Count = 5.0

ph-index = 10

Forward Citations = 359(Granted Patents)

Forward Citations (Not Self Cited) = 324(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hsin-chu County, TW (2008)
  • Taichung, TW (2017)
  • Hsinchu, CN (2020)
  • Hsin-Chu, TW (2000 - 2024)

Company Filing History:

goldMedal122 out of 40,848 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2000-2025

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Areas of Expertise:
Semiconductor Devices
Fin Field-Effect Transistor
Interconnect Structures
Etch Profile Control
Integrated Circuit Structures
Memory Cell Technology
Dielectric Cap Structures
Threshold Voltage Tuning
Protrusion Source Devices
Soft Ashing Process
Metal-To-Source/Drain Plugs
Mosfet Structures
122 patents (USPTO):Explore Patents
1. 12477821 - Semiconductor device having air spacers (2025-11-18),
2. 12471357 - Semiconductor device and method (2025-11-11),
3. 12446296 - Etch profile control of via opening (2025-10-14),
4. 12424444 - Soft ashing process for forming protective layer on conductive cap layer of semiconductor device (2025-09-23),
5. 12389667 - Fin field-effect transistor device and method (2025-08-12),
6. 12349435 - Vertical device having a protrusion source (2025-07-01),
7. 12293947 - Gap patterning for metal-to-source/drain plugs in a semiconductor device (2025-05-06),
8. 12293910 - Interconnect structure for semiconductor devices (2025-05-06),
9. 12278277 - Fin field-effect transistor and method of forming the same (2025-04-14),
10. 12272731 - Middle-of-line interconnect structure and manufacturing method (2025-04-08),
11. 12268027 - Middle-of-line interconnect structure and manufacturing method (2025-04-01),
12. 12237228 - Semiconductor device and method (2025-02-25),
13. 12219882 - Memory cell with low resistance top electrode contact and methods for forming the same (2025-02-04),
14. 12205816 - Interconnect structure for semiconductor devices (2025-01-21),
15. 12183633 - Dielectric cap structure in semiconductor devices and methods of manufacturing the same (2024-12-31),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I can provide you with the requested article without any issue.

Title: Trailblazer in Technology: The Innovative Journey of Huan-Just Lin

Introduction:

Huan-Just Lin, a visionary inventor based in Hsinchu, Taiwan, is a renowned figure in the technology industry. With a staggering 99 patents to his name, Lin's relentless pursuit of innovation and his commitment to creating a more sustainable future have set him apart as a true trailblazer in the field.

Latest Patents:

Among his latest patents is the groundbreaking "Etch profile control of gate contact opening," revolutionizing the ion implantation process to enhance the efficiency of forming gate contact openings. Additionally, Lin's "Fin field-effect transistor device and method" showcases his expertise in semiconductor device fabrication, further solidifying his reputation as a leading innovator in the industry.

Career Highlights:

Currently affiliated with Taiwan Semiconductor Manufacturing Company Limited (TSMC), Lin has played a pivotal role in driving technological advancements within the organization. His contributions have not only propelled TSMC to new heights but have also cemented his status as a key player in the tech sector.

Collaborations:

Collaborating closely with esteemed colleagues like De-Fang Chen and Chun-Hung Lee, Lin has thrived in a collaborative environment, leveraging collective expertise to push the boundaries of technological innovation. Together, they have spearheaded numerous projects that have reshaped the industry landscape.

Conclusion:

In conclusion, Huan-Just Lin's remarkable journey as an inventor underscores his unwavering dedication to driving technological progress and shaping a more sustainable future. His prolific patent portfolio, coupled with his trailblazing spirit, serves as an inspiration for generations of innovators to come, leaving an indelible mark on the realm of technology.

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