The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Feb. 13, 2024
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
De-Fang Chen, Hsinchu, TW;
Teng-Chun Tsai, Hsinchu, TW;
Cheng-Tung Lin, Hsinchu County, TW;
Li-Ting Wang, Hsinchu, TW;
Chun-Hung Lee, Hsinchu, TW;
Ming-Ching Chang, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.