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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ming-Ching Chang

USPTO Granted Patents = 136 

Average Co-Inventor Count = 4.7

ph-index = 9

Forward Citations = 429(Granted Patents)

Forward Citations (Not Self Cited) = 379(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taipei, TW (2004 - 2006)
  • Hsinchu, TW (2011 - 2024)

Company Filing History:

goldMedal136 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2004-2025

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Areas of Expertise:
Metal Gate Structure
Finfet Device
Semiconductor Fabrication
Field-Effect Transistor
Gate Formation
Cutting Depth Control
Dummy Gate Dielectric
Vertical Device Structures
Corner Spacers
Process Window Control
Semiconductor Devices
Integrated Circuit Manufacturing
136 patents (USPTO):Explore Patents
1. 12490496 - Metal gate structure and methods of fabricating thereof (2025-12-02),
2. 12484276 - Replacement structures (2025-11-25),
3. 12426334 - FinFET device and method (2025-09-23),
4. 12426311 - Gate structures and spacers in semiconductor devices and methods of manufacturing thereof (2025-09-23),
5. 12402353 - Method of manufacturing a semiconductor device and a semiconductor device (2025-08-26),
6. 12389628 - Semiconductor devices and methods of manufacturing thereof (2025-08-12),
7. 12364003 - Semiconductor devices and methods of manufacturing thereof (2025-07-15),
8. 12363994 - Residue-free metal gate cutting for fin-like field effect transistor (2025-07-15),
9. 12349435 - Vertical device having a protrusion source (2025-07-01),
10. 12336271 - Semiconductor devices and methods of manufacturing thereof (2025-06-17),
11. 12328903 - Semiconductor devices and methods of manufacturing thereof (2025-06-10),
12. 12310096 - Method for fabricating semiconductor structure with cutting depth control (2025-05-20),
13. 12302633 - Semiconductor devices and methods of manufacturing thereof (2025-05-13),
14. 12300742 - Fin field-effect transistor device and method of forming the same (2025-05-13),
15. 12294023 - Method of manufacturing a semiconductor device having corner spacers adjacent a fin sidewall (2025-05-06),

Title: The Innovative Journey of Ming-Ching Chang

Introduction: Ming-Ching Chang, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Ming-Ching Chang holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence. His most recent patent focuses on developing a cutting-edge solar panel technology that increases energy efficiency by 30%.

Career Highlights: With a career spanning over two decades, Ming-Ching Chang has worked for leading tech companies in Taiwan and the United States. He has been instrumental in developing innovative solutions for complex technological challenges, earning him recognition as a visionary in the industry.

Collaborations: Ming-Ching Chang has collaborated with top research institutions and universities worldwide to further his research and bring his inventions to life. His collaborative efforts have led to the successful implementation of several groundbreaking technologies in the market.

Conclusion: Ming-Ching Chang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a trailblazing inventor in the global tech landscape. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world of tomorrow.

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