The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jul. 11, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuei-Yu Kao, Hsinchu, TW;
Shih-Yao Lin, Taipei, TW;
Chen-Ping Chen, Yilan, TW;
Chih-Chung Chiu, Hsinchu, TW;
Chih-Han Lin, Hsinchu, TW;
Ming-Ching Chang, Hsinchu, TW;
Chao-Cheng Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Provided are devices with replacement structures and methods for fabricating such structures. A method includes forming a layer over a semiconductor material having a top surface in a horizontal plane; forming a dummy structure over the layer, wherein the dummy structure has sidewall, wherein the dummy structure lies directly over a first region of the layer and over a first region of the semiconductor material under the first region of the layer, and wherein the dummy structure does not lie directly over a second region of the layer or over a second region of the semiconductor material under the second region of the layer, and removing the second region of the layer and forming a side edge of the first region of the layer, wherein the side edge forms an angle of from 90 to 100 degrees with the horizontal plane.