The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jun. 04, 2024
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Shih-Yao Lin, New Taipei, TW;
Kuei-Yu Kao, Hsinchu, TW;
Chen-Ping Chen, Yilan County, TW;
Chih-Chung Chiu, Hsinchu, TW;
Chih-Han Lin, Hsinchu, TW;
Ming-Ching Chang, Hsinchu, TW;
Chao-Cheng Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device is provided. The method includes forming a fin structure extending along a first lateral direction; forming a dummy gate structure that is over a portion of the fin structure and extends along a second direction perpendicular to the first lateral direction; growing source/drain structures that are respectively coupled to ends of the portion of the fin structure; removing the dummy gate structure to form a gate trench; lining inner sidewalls of the gate trench with a gate spacer; and forming an active gate structure in the gate trench.