The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Jun. 20, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Chang Hung, Hsinchu, TW;
Shu-Yuan Ku, Hsinchu County, TW;
I-Wei Yang, Yilan County, TW;
Yi-Hsuan Hsiao, Taipei, TW;
Ming-Ching Chang, Hsinchu, TW;
Ryan Chia-Jen Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method incudes forming first and second semiconductor fins upwardly extending from a substrate; forming a gate strip extending across the first and second semiconductor fins; growing first source/drain regions on the first semiconductor fin and at opposite sides of the gate strip, second source/drain regions on the second semiconductor fin and at opposite sides of the gate strip; depositing a dielectric layer over the first and second source/drain regions; forming an isolation material in the dielectric layer and between one of the first source/drain regions and one of the second source/drain regions; performing an etching process on the isolation material and the gate strip to form an opening, the opening breaking the grid strip and recessing the isolation material; forming a separation material in the opening.