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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yi-Hsuan Hsiao

This inventor holds 33 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Semiconductor Fabrication. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Macronix International Co., Ltd.. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi-Hsuan Hsiao. Retrieved from https://idiyas.com/inventor/yi-hsuan-hsiao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 97.0


Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 3,248(Granted Patents)


Location History:

  • Chiayi County, TW (2011)
  • Budai Township, Chiavi County, TW (2012)
  • Budai Township, TW (2013 - 2014)
  • Budai Township, Chiayi County, TW (2012 - 2015)
  • Taipei, TW (2019 - 2023)
  • Hsinchu, TW (2013 - 2024)

Company Filing History:

goldMedal18 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal15 out of 3,609 
 
Macronix International Co., Ltd.
 patents

Years Active: 2011-2025

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Areas of Expertise:
Metal Gate Cutting
Fin-like Field Effect Transistor
Semiconductor Structure
3D NAND Memory
Charge-Trapping Flash
Thermal Management
Memory Architecture
Depletion-mode Devices
Integration Techniques
Residual-free Processes
Thin Film Arrays
33 patents (USPTO):Explore Patents
1. 12363994 - Residue-free metal gate cutting for fin-like field effect transistor (2025-07-15),
2. 12310096 - Method for fabricating semiconductor structure with cutting depth control (2025-05-20),
3. 12218130 - Semiconductor structure cutting process and structures formed thereby (2025-02-04),
4. 12166105 - Semiconductor device structure with metal gate stacks (2024-12-10),
5. 11915980 - Residue-free metal gate cutting for fin-like field effect transistor (2024-02-27),
6. 11855085 - Semiconductor structure cutting process and structures formed thereby (2023-12-26),
7. 11830926 - Semiconductor device structure with metal gate stacks (2023-11-28),
8. 11721588 - Semiconductor structure with cutting depth control and method for fabricating the same (2023-08-08),
9. 11527443 - Residue-free metal gate cutting for fin-like field effect transistor (2022-12-13),
10. 11444080 - Semiconductor structure cutting process and structures formed thereby (2022-09-13),
11. 11201230 - Semiconductor device structure with metal gate stacks (2021-12-14),
12. 11031290 - Semiconductor structure with cutting depth control and method for fabricating the same (2021-06-08),
13. 10943828 - Residue-free metal gate cutting for fin-like field effect transistor (2021-03-09),
14. 10867998 - Semiconductor structure cutting process and structures formed thereby (2020-12-15),
15. 10833077 - Semiconductor structure cutting process and structures formed thereby (2020-11-10),

Title: The Innovative Journey of Yi-Hsuan Hsiao

Introduction: Yi-Hsuan Hsiao is a pioneering inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yi-Hsuan Hsiao holds several patents in the realm of electronics and semiconductor technology, showcasing his continuous dedication to pushing the boundaries of what is possible in the industry.

Career Highlights: With a career spanning over two decades, Yi-Hsuan Hsiao has worked with some of the leading tech companies in Taiwan, honing his skills and expertise in research and development. His innovative mindset and problem-solving abilities have led to the creation of cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Yi-Hsuan Hsiao has collaborated with top researchers, engineers, and scientists, both locally and internationally. These collaborations have not only enriched his own knowledge but have also resulted in the development of groundbreaking inventions that have had a significant impact on the tech world.

Conclusion: Yi-Hsuan Hsiao's relentless pursuit of innovation and his passion for creating technology that shapes the future make him a true visionary in the field of inventions. His contributions continue to inspire and pave the way for future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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