The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Oct. 19, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Hsuan Hsiao, Taipei, TW;
Shu-Yuan Ku, Zhubei, TW;
Chih-Chang Hung, Hsinchu, TW;
I-Wei Yang, Yilan County, TW;
Chih-Ming Sun, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a first conductive material and a second conductive material disposed over the semiconductor substrate and the first dielectric layer. The semiconductor device structure further includes a second dielectric layer surrounding the first conductive material and the second conductive material and an insulating structure over the semiconductor substrate. The insulating structure is disposed between the first conductive material and the second conductive material. The insulating structure comprises a material different from the first dielectric layer and the second dielectric layer.