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For the Inventor, By the Inventor

Zhubei, Taiwan

Shu-Yuan Ku

This inventor holds 91 USPTO granted patents and 40 published patent applications, primarily in Semiconductor Fabrication (CPC class H01L21-823431). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shu-Yuan Ku. Retrieved from https://idiyas.com/inventor/shu-yuan-ku

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 91 

% Patents Active = 97.8

Average Co-Inventor Count = 4.8

ph-index = 7

Forward Citations = 129(Granted Patents)

Forward Citations (Not Self Cited) = 88(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Hsin-Chu, TW (2013 - 2023)
  • Hsinchu Country, TW (2023)
  • Zhubei, TW (2011 - 2024)
  • Hsinchu County, TW (2019 - 2024)
  • Hsinchu, TW (2024)

Company Filing History:

goldMedal91 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2011-2026

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Areas of Expertise:
Semiconductor Device
Metal Gate
Fin Field-Effect Transistor
Dielectric Refill
Transistor Gates
Etching Process
Profile Control
Dummy Gate
Structure Cutting
Manufacturing Methods
Device Structure
Tilt Angle
91 patents (USPTO):Explore Patents
1. 12696488 - Semiconductor device structure and methods of forming the same (2026-07-28),
2. 12642023 - Plasma etching processes (2026-05-26),
3. 12610761 - Metal etching with reduced tilt angle (2026-04-21),
4. 12610611 - Semiconductor device structure and methods of forming the same (2026-04-21),
5. 12563803 - Cut metal gate processes (2026-02-24),
6. 12538562 - Method of manufacturing a semiconductor device including depositing and etching a liner multiple times (2026-01-27),
7. 12490496 - Metal gate structure and methods of fabricating thereof (2025-12-02),
8. 12402404 - Semiconductor devices with interface between gate isolation structure and dummy channel having curved profile and methods of manufacturing thereof (2025-08-26),
9. 12389664 - Transistor gates and methods of forming thereof (2025-08-12),
10. 12382650 - Multi-layer dielectric refill for profile control in semiconductor devices (2025-08-05),
11. 12363999 - Fin field-effect transistor and method of forming the same (2025-07-15),
12. 12363994 - Residue-free metal gate cutting for fin-like field effect transistor (2025-07-15),
13. 12363976 - Semiconductor devices and methods of manufacturing thereof (2025-07-15),
14. 12349268 - Package component (2025-07-01),
15. 12310096 - Method for fabricating semiconductor structure with cutting depth control (2025-05-20),

Title: The Innovative Journey of Shu-Yuan Ku

Introduction:

Shu-Yuan Ku, a visionary inventor hailing from Zhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents:

Shu-Yuan Ku's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights:

With a career spanning over two decades, Shu-Yuan Ku has established himself as a pioneer in the tech industry, holding numerous patents that have revolutionized various sectors. His dedication to pushing the boundaries of what is possible has earned him recognition as a leading innovator in Taiwan.

Collaborations:

Throughout his career, Shu-Yuan Ku has collaborated with top research institutions, universities, and tech companies to bring his inventions to life. His ability to work seamlessly with multidisciplinary teams has led to the successful development and commercialization of cutting-edge technologies.

Conclusion:

In conclusion, Shu-Yuan Ku's passion for innovation, coupled with his relentless drive to create a positive impact on society, sets him apart as a trailblazer in the world of technology. His remarkable journey continues to inspire aspiring inventors and entrepreneurs worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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