The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Nov. 20, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shu-Uei Jang, Hsinchu, TW;
Chen-Huang Huang, Hsinchu, TW;
Ryan Chia-Jen Chen, Hsinchu, TW;
Shiang-Bau Wang, Pingzchen, TW;
Shu-Yuan Ku, Zhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/76224 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 84/0135 (2025.01); H10D 84/0147 (2025.01); H10D 84/0158 (2025.01); H10D 84/834 (2025.01);
Abstract
A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.