The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Jun. 26, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chao-Hsuan Chen, Hsinchu, TW;
I-Wei Yang, Yilan, TW;
Chang-Han Tsai, Hsinchu, TW;
Shu-Uei Jang, Hsinchu, TW;
Shu-Yuan Ku, Hsinchu, TW;
Yih-Ann Lin, Hsinchu, TW;
Ryan Chia-Jen Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/28 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01L 21/02118 (2013.01); H01L 21/0337 (2013.01); H01L 21/28114 (2013.01); H01L 21/32139 (2013.01); H10D 30/024 (2025.01); H10D 64/017 (2025.01); H10D 84/0135 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract
Methods for etching metal, such as for processing a metal gate, are provided. A method includes forming a hard mask over the metal, wherein the hard mask includes a sidewall defining an opening; and performing a plasma etching process including cycles of depositing a carbon nitride film on the sidewall and etching the metal.