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For the Inventor, By the Inventor

Jhudong, Taiwan

Yih-Ann Lin

USPTO Granted Patents = 62 

Average Co-Inventor Count = 5.2

ph-index = 8

Forward Citations = 173(Granted Patents)

DiyaCoin DiyaCoin = 0.25 


Inventors with similar research interests:


Location History:

  • Taipei, TW (2002 - 2006)
  • Jhudong Township, Hsinchu County, TW (2010 - 2014)
  • Hsinchu County, TW (2012 - 2024)
  • Jhudong Township, TW (2012 - 2024)

Company Filing History:

goldMedal62 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2002-2025

where 'Filed Patents' based on already Granted Patents

62 patents (USPTO):
1. 12490487 - Tunable structure profile (2025-12-02),
2. 12471310 - Method of making a FinFET device including a step of removing a portion of a fin (2025-11-11),
3. 12408412 - Air spacers around contact plugs and method forming same (2025-09-02),
4. 12376351 - Self-aligned contact air gap formation (2025-07-29),
5. 12087639 - Fin field-effect transistor devices and methods of forming the same (2024-09-10),
6. 12068199 - Methods for forming fin field-effect transistors (2024-08-20),
7. 12027370 - Method of forming an integrated circuit using a patterned mask layer (2024-07-02),
8. 12015071 - Air spacers around contact plugs and method forming same (2024-06-18),
9. 12015030 - Gate stacks for semiconductor devices of different conductivity types (2024-06-18),
10. 11908939 - Method of making a FinFET device including a step of recessing a subset of the fins (2024-02-20),
11. 11901408 - Self-aligned contact air gap formation (2024-02-13),
12. 11670552 - Methods for forming fin field-effect transistors (2023-06-06),
13. 11495501 - Fin field-effect transistor devices and methods of forming the same (2022-11-08),
14. 11462408 - Method of forming an integrated circuit using a patterned mask layer (2022-10-04),
15. 11355616 - Air spacers around contact plugs and method forming same (2022-06-07),

Title: Innovations by Yih-Ann Lin in Semiconductor Technology

Introduction: Yih-Ann Lin is a prolific inventor based in Jhudong, Taiwan, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 58 patents, Lin has been at the forefront of developing advanced methods and devices that enhance the functionality and efficiency of semiconductor devices.

Latest Patents: Among his latest innovations are groundbreaking patents focused on fin field-effect transistor (FinFET) devices and their formation methods. One notable patent describes a comprehensive method for creating a semiconductor device that includes forming a first and second fin, along with isolation regions and a uniquely structured metal gate. This patent highlights a method of creating a recess within the metal gate that varies in width, enhancing its performance characteristics. Another patent by Lin outlines a process for forming semiconductor fins using a patterned etching mask, allowing selective etching to create distinct fin structures critical for device performance.

Career Highlights: Lin's work primarily takes place at Taiwan Semiconductor Manufacturing Company Ltd., a leader in the industry. His innovations not only contribute to the company's portfolio but also to the broader semiconductor landscape, influencing how devices are manufactured and optimized.

Collaborations: Throughout his career, Lin has collaborated with esteemed colleagues such as Ryan Chia-Jen Chen and Chao-Cheng Chen. These partnerships have facilitated the exchange of ideas and techniques, further driving advancements in semiconductor technology.

Conclusion: Yih-Ann Lin's contributions to the field of semiconductor technology through his numerous patents reflect his pioneering spirit and dedication to innovation. As he continues to explore new methodologies and devices, his work remains instrumental in shaping the future of electronic devices and systems.

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