The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Mar. 24, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jih-Sheng Yang, Hsinchu, TW;
Li-Wei Yin, Hsinchu, TW;
Yu-Hsien Lin, Kaohsiung, TW;
Tzu-Wen Pan, Hsinchu, TW;
Shih-Chieh Chao, Taichung, TW;
Chia Ming Liang, Taipei, TW;
Yih-Ann Lin, Hsinchu, TW;
Ryan Chia-Jen Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Provided are structures and methods for forming structures with surfaces having a W-shaped profile. An exemplary method includes differentially etching a gate material to a recessed surface including a first and second horn and a valley located therebetween including first and second sections and a middle section therebetween; depositing an etch-retarding layer over the recessed surface including first and second edge regions and a central region therebetween, wherein the first edge region is located over the first horn and the first section, the second edge region is located over the second horn and the second section, the central region is located over the middle region, and the central region is thicker than the first edge region and the second edge region; and performing an etch process to recess the horns to establish the gate material with a W-shaped profile.