The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Jun. 07, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Chang Hung, Hsinchu, TW;
Shu-Yuan Ku, Hsinchu County, TW;
I-Wei Yang, Yilan County, TW;
Yi-Hsuan Hsiao, Taipei, TW;
Ming-Ching Chang, Hsinchu, TW;
Ryan Chia-Jen Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
The first and second fins extend upwardly from a semiconductor substrate. The shallow trench isolation structure laterally surrounds lower portions of the first and second fins. The first gate structure extends across an upper portion of the first fin. The second gate structure extends across an upper portion of the second fin. The first source/drain epitaxial structures are on the first fin and on opposite sides of the first gate structure. The second source/drain epitaxial structures are on the second fin and on opposite sides of the second gate structure. The separation plug interposes the first and second gate structures and extends along a lengthwise direction of the first fin. The isolation material cups an underside of a portion of the separation plug between one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures.