The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

May. 22, 2024
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ryan Chia-Jen Chen, Hsinchu, TW;

Li-Wei Yin, Hsinchu, TW;

Tzu-Wen Pan, Hsinchu, TW;

Cheng-Chung Chang, Kaohsiung City, TW;

Shao-Hua Hsu, Taitung City, TW;

Yi-Chun Chen, Hsinchu, TW;

Yu-Hsien Lin, Kaohsiung City, TW;

Ming-Ching Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/751 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H10D 86/011 (2025.01); H10D 86/215 (2025.01);
Abstract

Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.


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