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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Cheng-Chung Chang

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Avery Dennison Corporation, National Yang Ming Chiao Tung University. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Chung Chang. Retrieved from https://idiyas.com/inventor/cheng-chung-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 87.0

Average Co-Inventor Count = 6.7

ph-index = 9

Forward Citations = 278(Granted Patents)


Location History:

  • Hsinchu, TW (2006 - 2012)
  • Kaoshiung, TW (2013)
  • Kaohsiung, TW (2012 - 2024)

Company Filing History:

goldMedal15 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal6 out of 1,458 
 
Avery Dennison Corporation
 patents
bronzeMedal1 out of 1,249 
 
National Yang Ming Chiao Tung University
 patents
where one patent can have more than one assignee

Years Active: 2006-2026

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Areas of Expertise:
Semiconductor Structure
Nanostructure Transistor
Cutting Process
Air Spacer
Dielectric Structure
Device Manufacture
Bond Pad Protection
Label-Free Sensor
23 patents (USPTO):Explore Patents
1. 12635212 - Semiconductor structure with modified spacer and method for forming the same (2026-05-19),
2. 12132050 - Semiconductor structure cutting process and structures formed thereby (2024-10-29),
3. 12107149 - Air spacer and method of forming same (2024-10-01),
4. 12027608 - Semiconductor structure having dielectric structure extending into second cavity of semiconductor Fin (2024-07-02),
5. 11996466 - Semiconductor device and method of manufacture (2024-05-28),
6. 11961919 - Nanostructure field-effect transistor device and method of forming (2024-04-16),
7. 11894370 - Semiconductor structure cutting process and structures formed thereby (2024-02-06),
8. 11652155 - Air spacer and method of forming same (2023-05-16),
9. 11502076 - Semiconductor structure cutting process and structures formed thereby (2022-11-15),
10. 11349014 - Air spacer and method of forming same (2022-05-31),
11. 11329140 - Semiconductor device and method of manufacture (2022-05-10),
12. 11282967 - Nanostructure field-effect transistor device and method of forming (2022-03-22),
13. 11114549 - Semiconductor structure cutting process and structures formed thereby (2021-09-07),
14. 10325912 - Semiconductor structure cutting process and structures formed thereby (2019-06-18),
15. D752682 - Note sheets and related pads of note sheets (2016-03-29),

Title: Cheng-Chung Chang: Pioneering Inventor from Kaohsiung

Introduction: Cheng-Chung Chang is a renowned inventor hailing from Kaohsiung, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Cheng-Chung Chang holds several patents in the areas of renewable energy, sustainable technologies, and advanced electronics, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Cheng-Chung Chang has worked with leading research institutions and technology companies, consistently pushing the boundaries of what is possible in the world of invention.

Collaborations: Throughout his career, Cheng-Chung Chang has collaborated with top engineers, scientists, and inventors from around the globe, fostering a culture of innovation and excellence in all his projects.

Conclusion: Cheng-Chung Chang's passion for innovation and his relentless pursuit of technological advancement make him a true pioneer in the world of inventors, leaving a lasting impact on the industry and inspiring future generations to dream big and create boldly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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