The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

May. 20, 2021
Applicant:

DO Not Use—taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ryan Chia-Jen Chen, Hsinchu, TW;

Li-Wei Yin, Hsinchu, TW;

Tzu-Wen Pan, Hsinchu, TW;

Cheng-Chung Chang, Kaohsiung, TW;

Shao-Hua Hsu, Taitung, TW;

Yi-Chun Chen, Hsinchu, TW;

Yu-Hsien Lin, Kaohsiung, TW;

Ming-Ching Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/1054 (2013.01); H01L 29/785 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01);
Abstract

Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.


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